Title :
Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow
Author :
Takahashi, T. ; Nishimura, T. ; Chen, L. ; Sakata, S. ; Kita, K. ; Toriumi, A.
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
GeO2/Ge and high-k(LaYO3)/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge- intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm2/Vsec in FUSI/GeO2/Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved by inserting ultra-thin GeOx layer between metal and Ge, which enables us to operate metal source/drain Ge n-MOSFETs for the first time.
Keywords :
MOSFET; electron mobility; germanium compounds; high-k dielectric thin films; hole mobility; lanthanum compounds; semiconductor device models; Ge; GeO2-Ge; GeO2-LaYO3-Ge; electron mobility; germanium-interfacing concepts; hole mobility; interface conscious process flow; metal-high-k-Ge CMOS; metal-n-germanium ohmic characteristics; radical nitrogen; source-drain p-MOSFET; ultra-thin GeOx layer; Annealing; Atomic measurements; CMOS process; Capacitance-voltage characteristics; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Spectroscopy; Thickness measurement;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419041
