Title :
CMOS Devices - Physics and Technologies of Mobility Enhancement
Author :
Takagi, Shinichi ; Clerc, Raphael
Author_Institution :
The University of Tokyo MIRAI-AIST
Keywords :
CMOS technology; Capacitance; Capacitive sensors; Electric variables; Fabrication; Germanium silicon alloys; MOSFETs; Paper technology; Physics; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419042
