Title :
Extension of Universal Mobility Curve to Multi-Gate MOSFETs
Author :
Yoshimoto, Hiroyuki ; Sugii, Nobuyuki ; Hisamoto, Digh ; Saito, Shin-ichi ; Tsuchiya, Ryuta ; Kimura, Shin´ichiro
Author_Institution :
Hitachi Ltd., Tokyo
Abstract :
The concept of "universal mobility" was successfully extended to multi-gate transistors. We developed a novel method to determine the effective electric field (Eeff) in multi-gate transistors experimentally taking all charges in and around the silicon body into account. By applying this method to double-gate (DG) transistors, we showed that Eeff goes from positive to negative, which depends on whether the front- or back- side channel is dominant. The validity of the universal relationship between mueff and Eeff was confirmed even with negative Eeff. Moreover, in the case of a symmetric DG transistor (Vfg=Vbg) like FinFETs, a high mueff can be obtained even at high gate-overdrive voltages because Eeff is always approximately zero.
Keywords :
MOSFET; semiconductor device measurement; silicon; FinFET; effective electric field; gate-overdrive voltages; multigate MOSFET; multigate transistors; symmetric DG transistor; universal mobility curve; Electrostatics; FinFETs; High K dielectric materials; High-K gate dielectrics; Immune system; Laboratories; MOSFETs; Quantum mechanics; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419043