Title :
More-than-Universal Mobility in Double-Gate SOI p-FETs with Sub-10-nm Body Thickness -Role of Light-Hole Band and Compatibility with Uniaxial Stress Engineering
Author :
Kobayashi, Shigeki ; Saitoh, Masumi ; Uchida, Ken
Author_Institution :
Toshiba Corp., Yokohama
Abstract :
Hole mobility (muh) enhancement by double gate (DG) mode in (001)/<110> ultrathm-body SOI pFETs with sub-10nm SOI thickness (TSOL) is investigated. It is found muh in DG mode (muDG) is greatly enhanced in all the measured TSOL in comparison with single gate mode. muDG of sub-10 nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher muDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher muDG is further enhanced by uniaxial stress.
Keywords :
carrier density; hole mobility; insulated gate field effect transistors; silicon-on-insulator; Si-SiO2; average effective mass reduction; double-gate SOI p-FET; high surface carrier densities; hole mobility enhancement; light-hole band; size 10 nm; subband calculations; ultrathin-body SOI pFET; uniaxial stress engineering; universal mobility; Charge carrier density; Degradation; Density measurement; Effective mass; Electronic mail; FETs; Laboratories; Large scale integration; Stress; Temperature;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419044
