DocumentCode :
468891
Title :
Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility
Author :
Kuzum, Duygu ; Pethe, Abhijit J. ; Krishnamohan, Tejas ; Oshima, Yasuhiro ; Sun, Yun ; McVittie, Jim P. ; Pianetta, Piero A. ; McIntyre, Paul C. ; Saraswat, Krishna C.
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
723
Lastpage :
726
Abstract :
The highest electron mobility to-date in Ge is reported. For the first time, the effect of surface orientation on mobility is investigated experimentally. Carrier scattering mechanisms are studied through low temperature mobility measurements. Ozone-oxidation has been introduced to engineer Ge/insulator interface. Minimum density of interface states (DDit) of 3x1011 cm-2 V-1 is demonstrated and Dit across the bandgap is extracted.
Keywords :
electron mobility; field effect transistors; germanium; germanium; high electron mobility FET; Acoustic scattering; Conducting materials; Degradation; Dielectric substrates; Electron mobility; Light scattering; MOS devices; Photonic band gap; Plasma temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419048
Filename :
4419048
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=468891
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