DocumentCode :
46892
Title :
AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation
Author :
Sang-Woo Han ; Sung-Hoon Park ; Jae-Gil Lee ; Jongtae Lim ; Ho-Young Cha
Author_Institution :
Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea
Volume :
36
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
540
Lastpage :
542
Abstract :
We have developed an AlGaN/GaN-on-Si metal- oxide-semiconductor heterojunction field-effect transistor (MOSHFET) integrated with a clamp circuit to enable normally-off operation. A clamp circuit consisting of a multilayer MIM capacitor and a Schottky barrier diode was monolithically integrated with a normally ON AlGaN/GaN MOSHFET. The integrated clamp circuit shifted the input driving signal from (0, 20 V) to (-19.2, 0.8 V), allowing the normally ON AlGaN/GaN MOSHFET with a pinchoff voltage of -14 V to be operated as a normally-off device. The multichannel device with a 5-mm channel width exhibited a drain current density of ~470 mA/mm and a breakdown voltage of 900 V. In comparison with other conventional normally-off GaN-based FETs, a higher threshold voltage with high current density (i.e., low ON-resistance) can be achieved with easy device processing, no need for gate recess or complicated epitaxial growth.
Keywords :
III-V semiconductors; MIM devices; Schottky diodes; aluminium compounds; driver circuits; field effect transistor switches; gallium compounds; power MOSFET; thin film capacitors; wide band gap semiconductors; AlGaN-GaN; MOSHFET; Schottky barrier diode; breakdown voltage; driving signal; heterojunction field effect transistor; integrated clamp circuit; metal oxide semiconductor; multilayer MIM capacitor; normally-off operation; voltage 0.2 V to -19.2 V; voltage 900 V; Aluminum gallium nitride; Clamps; Gallium nitride; HEMTs; Logic gates; MODFETs; MOSHFETs; Clamp circuit; GaN; clamp circuit; metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET); monolithic integration; normally-off;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2427202
Filename :
7096943
Link To Document :
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