• DocumentCode
    469366
  • Title

    Formation of Er-Germanides from Ti-capped Er Thin Films on Ge(001)

  • Author

    Liew, S.L. ; Balakrisnan, B. ; Lai, M.Y. ; Chi, D.Z.

  • Author_Institution
    Inst. of Mater. Res. & Eng., Singapore
  • fYear
    2006
  • fDate
    11-14 Dec. 2006
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The solid-state reaction between Ti-capped Er thin film and Ge(001) was investigated. The germanide film formed had a smooth morphology with the phase identified as ErGe1.5. The film is highly textured with ErGe1.5 (1100) //Ge(001). ErGe1.5 has a resistivity value ~18 muOmega.cm. The Ti cap was able to delay the erbium oxide formation to higher temperature.
  • Keywords
    erbium; germanium; semiconductor thin films; surface diffusion; surface morphology; titanium; Er-Ti-Ge; Ge(001); smooth morphology; solid-state reaction; thin films; Annealing; Conductivity; Erbium; Morphology; Scanning electron microscopy; Silicides; Solid state circuits; Substrates; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Materials and Packaging, 2006. EMAP 2006. International Conference on
  • Conference_Location
    Kowloon
  • Print_ISBN
    978-1-4244-0834-4
  • Electronic_ISBN
    978-1-4244-0834-4
  • Type

    conf

  • DOI
    10.1109/EMAP.2006.4430596
  • Filename
    4430596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=469366