Title :
TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique
Author :
Hitomi, Keitaro ; Onodera, Toshiyuki ; Shoji, Tadayoshi ; Hiratate, Yukio ; He, Zhong
Author_Institution :
Tohoku Inst. of Technol., Sendai
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
Pixellated thallium bromide (TIBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TIBr detectors were performed. An electron mobility-lifetime product of 4.1 times 10-3 cm2/V was obtained from a TIBr detector.
Keywords :
electron mobility; gamma-ray detection; gamma-ray spectrometers; semiconductor counters; compound semiconductor; depth sensitive single polarity charge sensing technique; electron mobility-lifetime products; electron volt energy 1.33 MeV; electron volt energy 356 keV; electron volt energy 662 keV; energy resolutions; gamma-ray spectrometers; pixellated thallium bromide detectors; temperature 293 K; temperature 298 K; Anodes; Cathodes; Crystalline materials; Detectors; Electron mobility; Energy resolution; Furnaces; Intelligent systems; Spectroscopy; Telephony;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4436529
