Title :
Silicon photomultiplier light response properties
Author :
Bosio, Carlo ; Kuznetsova, Ekaterina ; Gentile, Simonetta ; Meddi, Franco
Author_Institution :
INFN, Rome
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
The presented results are obtained during the first steps taken in order to develop a setup and measurement procedures which allow to compare properties of diverse kinds of silicon photomultiplier. The response to low-intensity light was studied for silicon photomultipliers produced by MEPhI/PULSAR (Russia), CPTA (Russia), Hamamatsu (Japan), ITC-irst (Italy) and SensL (Ireland).
Keywords :
photomultipliers; silicon radiation detectors; CPTA; Hamamatsu; ITC-irst; MEPhI/PULSAR; SensL; low-intensity light; silicon photomultiplier; Breakdown voltage; Current measurement; Light emitting diodes; Manufacturing; Nuclear and plasma sciences; Photomultipliers; Sensor phenomena and characterization; Silicon; Temperature sensors; Voltage control;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4436567
