Capacitance simulations and measurements of 3D pixel sensors under 55 MeV proton exposure

Author

Metcalfe, J.E. ; Gorelov, I. ; Hoeferkamp, M. ; Seidel, S.

Author_Institution

Univ. of New Mexico, Albuquerque

Volume

3

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

2164

Lastpage

2168

Abstract

3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.

Keywords

capacitance measurement; proton effects; silicon radiation detectors; 3D pixel sensors; capacitance measurements; electron volt energy 55 MeV; high energy physics; high spatial resolution; input signal frequency; inter-electrode capacitance; p-type substrate; silicon detector design; Capacitance measurement; Capacitive sensors; Detectors; Electrodes; Geometry; Protons; Sensor phenomena and characterization; Silicon; Telephony; Testing; 3D; capacitance; irradiation; pixel; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4436580

Filename

4436580