Temperature effects in reverse-type avalanche photodiodes

Author

Sato, Mitsuhiro ; Yanagida, Takayuki ; Yoshikawa, Akira ; Yatsu, Yoichi ; Kataoka, Jun ; Saito, Fumio

Author_Institution

Tohoku Univ., Miyagi

Volume

2

fYear

2007

fDate

Oct. 26 2007-Nov. 3 2007

Firstpage

1491

Lastpage

1493

Abstract

The present paper shows ionization coefficient ratios, k values, k_t and k_effs of reverse-type Si avalanche photodiode. Both of k_eff and K₁, tend to increase when APDs are cooled down. The results for k_eff are 0.0023 plusmn 0.0002 at 20degC, 0.0027 plusmn 0.0003 at 0degC, and 0.0049 plusmn 0.0007 at -20degC. With the result of k₁, temperature dependency of k-values indicates mean free paths of the carriers for phonon scattering shows different temperature dependency, which is considered to reflect the inner structure of APDs.

Keywords

avalanche photodiodes; carrier mean free path; ionisation; nuclear electronics; phonons; readout electronics; silicon radiation detectors; solid scintillation detectors; carrier mean free paths; ionization coefficient ratios; phonon scattering; reverse-type Si avalanche photodiode; scintillation readout; temperature -20 C; temperature 0 C; temperature 20 C; temperature effects; Avalanche photodiodes; Dark current; Ionization; Noise measurement; Optical noise; Pulse amplifiers; Pulse measurements; Signal to noise ratio; Solid scintillation detectors; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

Conference_Location

Honolulu, HI

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4437281

Filename

4437281