Title :
Neutron intercepting silicon chip (NISC) - a sensitive neutron detector
Author :
Hossain, Tim ; Posey, Dan ; Fullwood, Clay ; Clopton, Mark
Author_Institution :
Cerium Lab. LLC, Austin
fDate :
Oct. 26 2007-Nov. 3 2007
Abstract :
Flash memory chip has been modified to serve as a sensitive solid state neutron detector. A dielectric layer used in the manufacture of the memory chip known as BPSG (borophosphosilicate glass) contains boron and when boron used in this layer is enriched born.
Keywords :
flash memories; neutron detection; position sensitive particle detectors; silicon radiation detectors; BPSG; borophosphosilicate glass; dielectric layer; enriched 10B; flash memory chip; neutron detector; neutron intercepting silicon chip; solid state neutron detector; Boron; Detectors; Flash memory; Helium; Neutrons; Nuclear and plasma sciences; Plastic packaging; Silicon; Threshold voltage; USA Councils;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0922-8
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2007.4437283
