A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

Author

Kiouseloglou, Athanasios ; Navarro, Gabriele ; Sousa, Veronique ; Persico, Alain ; Roule, Anne ; Cabrini, Alessandro ; Torelli, Guido ; Maitrejean, Sylvain ; Reimbold, Gilles ; De Salvo, Barbara ; Clermidy, Fabien ; Perniola, Luca

Author_Institution

CEA-LETI, Grenoble, France

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1246

Lastpage

1254

Abstract

In this paper, we examine the problem of the drift of the low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge₂Sb₂Te₅. A novel procedure, named R-SET technique, is proposed to boost the SET speed of these innovative phase change materials by overcoming the decrease of crystallization speed caused by Ge enrichment. The R-SET technique allows, at the same time, an optimized SET programming of the memory cell and the reduction of the LRS drift with respect to standard SET procedures. A circuit that generates the desired R-SET pulse based on a time reference scheme is proposed and discussed.

Keywords

antimony compounds; crystallisation; germanium compounds; phase change materials; phase change memories; Ge₂Sb₂Te₅; LRS drift; R-SET technique; SET programming; crystallization speed; low-resistance state performance; memory cell; phase change materials; phase change memory; Conductivity; Crystallization; Phase change materials; Programming; Resistance; Temperature measurement; ${rm Ge}_{2}{rm Sb}_{2}{rm Te}_{5}$ (GST); Crystallization speed; Ge₂Sb₂Te₅ (GST); Ge-rich; drift; phase change memories; phase change memories.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2310497

Filename

6777323