DocumentCode
47051
Title
On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays
Author
Leqi Zhang ; Cosemans, Stefan ; Wouters, Dirk J. ; Groeseneken, Guido ; Jurczak, Malgorzata ; Govoreanu, Bogdan
Author_Institution
imec, Leuven, Belgium
Volume
36
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
570
Lastpage
572
Abstract
This letter investigates the impact of resistive switching element (RSE) parameters on the read performance of a two-terminal one-selector one-resistor cell. SPICE array simulation results show that the reducing RLRS improves the read margin (RM) but trades off with power consumption (PR). While increasing RHRS improves the RM, too large a value leads to RM degradation when RHRS exceeds an optimal value. Therefore, choosing RHRS/RLRS ratio optimally is needed to maximize the RM while balancing PR. A highly nonlinear selector increases the optimal RHRS/RLRS ratio. However, further increasing the RSE toward higher optimal RHRS/RLRS ratio has only limited impact on the RM.
Keywords
SPICE; electronic switching systems; power consumption; resistive RAM; RM degradation; RSE parameters; SPICE array simulation; highly nonlinear selector; one-selector one-resistor crosspoint arrays; optimal RHRS-RLRS ratio; power consumption; read margin; read performance; resistive switching element parameters; two-terminal one-selector one-resistor cell; Degradation; Leakage currents; Optimized production technology; Power demand; Random access memory; Resistance; Switches; 1S1R; RRAM; Selector; crossbar array; on/off resistance ratio; read margin; selector;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2427313
Filename
7096964
Link To Document