Title :
Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
Author :
Tian-Jian Chu ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kuan-Chang Chang ; Rui Zhang ; Kai-Huang Chen ; Jung-Hui Chen ; Tai-Fa Young ; Jen-Wei Huang ; Jen-Chung Lou ; Min-Chen Chen ; Syuan-Yong Huang ; Hsin-Lu Chen ; Yong-En Syu ; Dinghua Bao ; Life, Simon M
Author_Institution :
Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.
Keywords :
hydrogen ions; plasma materials processing; random-access storage; switching circuits; RRAM switching mechanism; hafnium doped silicon oxide RRAM; hydrogen ion migration; hydrogen ions; hydrogen plasma-treated device; hydrogen-induced switching behavior; resistance transformation phenomenon; resistive random access memory; reversed voltage polarity; stop voltage; triresistive device; Educational institutions; Hydrogen; Ions; Plasmas; Resistance; Silicon; Switches; RRAM; hydrogen; resistive switching; tri-resistive states;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2295378
