Effects of High Electric Fields on the Magnitudes of Current Steps Produced by Single Particle Displacement Damage

Author

Auden, Elizabeth C. ; Weller, Robert A. ; Schrimpf, R.D. ; Mendenhall, Marcus H. ; Reed, R.A. ; Hooten, N.C. ; Bennett, W.G. ; King, Michael P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4094

Lastpage

4102

Abstract

Measurements of single particle displacement damage are presented as discrete increases in reverse-biased diode leakage current, or current steps, caused by individual heavy ions in ²⁵²Cf-irradiated JFET diodes. The maximum size of measured current steps agrees with calculations obtained from the expression for Shockley-Read-Hall generation when the radiation-induced defect density is derived from Monte Carlo simulations of atomic displacements and the electric field enhancement of defect emission is taken into account. The distribution of the current steps shows good agreement with experimental data.

Keywords

Monte Carlo methods; californium; electric field effects; junction gate field effect transistors; leakage currents; radiation hardening (electronics); semiconductor diodes; Cf; JFET diodes; Monte Carlo simulations; Shockley-Read-Hall generation; atomic displacements; current step magnitudes; defect emission; high electric field effect; radiation-induced defect density; reverse-biased diode leakage current; single particle displacement damage measurement; Degradation; Displacement measurement; JFETs; Leakage currents; Monte Carlo methods; Radiation effects; Displacement damage; Monte Carlo simulations; ions; radiation effects; single event effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2289737

Filename

6677616