Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

Author

Xingji Li ; Chaoming Liu ; Jianqun Yang

Author_Institution

Sch. of Mater. Sci. & Eng., Harbin Inst. of Technol., Harbin, China

Volume

15

Issue

2

fYear

2015

fDate

Jun-15

Firstpage

258

Lastpage

260

Abstract

An experimental concept of separating oxide-trapped charge and interface traps in silicon bipolar junction transistors (BJTs) irradiated by Co60 gamma ray is demonstrated. This concept is based on deep-level transient spectroscopy (DLTS) measurements with various filling pulsewidths. The characteristics of oxide-trapped charge and interface traps in bipolar transistors can be obtained by DLTS. The oxide-trapped charge shows positive and negative signals in the collector of NPN and PNP BJTs in DLTS signals, respectively. Unlike the oxide-trapped charge, the interface traps give positive signals in the same region of NPN and PNP BJTs.

Keywords

bipolar transistors; elemental semiconductors; gamma-rays; interface states; radiation hardening (electronics); silicon; Co60 gamma ray; DLTS measurement; DLTS signal; NPN BJT collector; PNP BJT collector; Si; deep-level transient spectroscopy measurement; experimental observation; filling pulsewidth; interface traps; ionization damaged silicon bipolar transistors; oxide-trapped charge; silicon BJT; Bipolar transistors; Electron traps; Ionization; Junctions; Radiation effects; Silicon; Transistors; Bipolar junction transistors; DLTS; bipolar junction transistors; radiation damage; radiation defect;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2015.2423316

Filename

7096984