• DocumentCode
    472621
  • Title

    Hot-Carrier and Wear-Out Phenomena in Submicron VLSI´s

  • Author

    Takeda, Eiji

  • Author_Institution
    Central Research Laboratory, Hi.tachi Ltd. Kokubunji, Tokyo 185, Japan
  • fYear
    1985
  • fDate
    14-16 May 1985
  • Firstpage
    2
  • Lastpage
    5
  • Keywords
    Channel hot electron injection; Circuits; Degradation; Dielectric breakdown; Dielectric substrates; Dielectrics and electrical insulation; Hot carrier injection; Hot carriers; Substrate hot electron injection; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1985. Digest of Technical Papers. Symposium on
  • Conference_Location
    Kobe, Japan
  • Print_ISBN
    4-930813-09-3
  • Type

    conf

  • Filename
    4480275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472621