Title :
A 1μm CMOS technology optimized for 1 mega bit DRAMs
Author_Institution :
Intel Corporation, Aloha, Oregon
Abstract :
This paper represents the outcome of a col laboratIve effort among a number of people In the Portland Technology Development Department of Intel whose names are too numerous to mention. SpecIfical Iy, the 1 Mb Process Integratlon Group, the lMb Device and Design groups, and the Basic Technology Groups have all directly participated In this project. Other groups that provided support Include Rollability Engineering, Product Engineering, and Fab Manufacturtng.
Keywords :
CMOS technology; DRAM chips; Dielectric substrates; Glass; Integrated circuit interconnections; Isolation technology; Manufacturing; Production; Reliability engineering; Silicon;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
