Title :
Stacked SOI CMOS Fabricated with Seeding Lateral Epitaxy
Author :
Yoshimi, M. ; Suguro, K. ; Takahashi, M. ; Hamasaki, T. ; Inoue, T. ; Yoshii, T. ; Taniguchi, K. ; Tango, H.
Author_Institution :
VLSI Research Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Japan
Keywords :
Annealing; Electron beams; Epitaxial growth; Fabrication; Grain boundaries; Position control; Ring oscillators; Silicon on insulator technology; Substrates; Threshold voltage;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
