Title :
A Three Dimensional Static RAM
Author :
Nishimura, T. ; Inoue, Y. ; Sugahara, K. ; Nakaya, M. ; Horiba, Y. ; Akasaka, Y.
Author_Institution :
LSI Research and Development Labolatory Mitsubishi Electric Corporation 4-1 Mizuhara, Itami 664, Japan
Keywords :
CMOS technology; Circuits; Fabrication; Large scale integration; MOSFETs; Power dissipation; Power supplies; Random access memory; Read-write memory; Voltage;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
