DocumentCode :
472636
Title :
Characteristics of MOSFET´s Fabricated in SPE Grown Polysilicon
Author :
Malhi, S.D.S. ; Sundaresan, R. ; Pollack, C.P.
Author_Institution :
Semiconductor Process and Design Center Texas Instruments Incorporated Dallas, TX 75265
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
36
Lastpage :
37
Keywords :
Annealing; Furnaces; Hafnium; MOSFETs; Nitrogen; Oxidation; Semiconductor films; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480291
Link To Document :
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