472638

A New Bipolar Transistor Structure for Very High Speed VLSI

Kobayashi, Yoshiji ; Yamamoto, Yousuke ; Sakai, Tltsushi

Atsugi Electrical Communication Laboratory, NTT 1839, Ono, Atsugi-shi, Kanagawa, Japan, 243-01

1985

14-16 May 1985

40

41

Bipolar transistors; Cutoff frequency; Electrodes; Electrons; Fabrication; Ion implantation; Laboratories; Parasitic capacitance; Propagation delay; Very large scale integration;

English

ieee

VLSI Technology, 1985. Digest of Technical Papers. Symposium on

Kobe, Japan

4-930813-09-3

conf

4480293