DocumentCode
472638
Title
A New Bipolar Transistor Structure for Very High Speed VLSI
Author
Kobayashi, Yoshiji ; Yamamoto, Yousuke ; Sakai, Tltsushi
Author_Institution
Atsugi Electrical Communication Laboratory, NTT 1839, Ono, Atsugi-shi, Kanagawa, Japan, 243-01
fYear
1985
fDate
14-16 May 1985
Firstpage
40
Lastpage
41
Keywords
Bipolar transistors; Cutoff frequency; Electrodes; Electrons; Fabrication; Ion implantation; Laboratories; Parasitic capacitance; Propagation delay; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480293
Link To Document