DocumentCode :
472640
Title :
Electrical and Microstructural Investigation into the Effect of Arsenic Emitter Concentration on the Enhanced Gain Polysilicon Emitter Bipolar Transistor
Author :
Wilson, M.C. ; Hunt, P.C. ; Jorgensen, N. ; Booker, G.R.
Author_Institution :
Plessey Research(Caswell)Ltd., Caswell, Towcester, Northants, England, NN12 8EQ
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
46
Lastpage :
47
Keywords :
Annealing; Bipolar transistors; Electrical resistance measurement; Grain size; Hafnium; Ion implantation; Microstructure; Oxidation; Rough surfaces; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480296
Link To Document :
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