Title :
Solid-II; High-Voltage, High-Gain Ka-Channel-Length CMOSFETs Using Silicide with Selfaligned Ultra-Shallow (3S) Junction
Author :
Horiuchi, Masatada
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Keywords :
Boron; CMOSFETs; Conductivity; Contact resistance; Laboratories; Measurement errors; Silicidation; Silicides; Surface resistance; Temperature;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
