Title :
A Three-Dimensional Process Simulator and its Application to Submicron VLSI´s
Author :
Onga, S. ; Taniguchi, K.
Author_Institution :
VLSI Research Center, TOSHIBA Corporation Kawasaki, 210 Japan
Keywords :
Capacitors; Etching; Impurities; Ion implantation; Kinetic energy; Multidimensional systems; Oxidation; Predictive models; Process design; Very large scale integration;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
