A new electron beam patterning technology for 0.2μm VLSI

The validity of e-beam direct writing technology for 0.5μm VLSI lithography has been demonstrated through 1´bit DRAM fabrication(l). Further extension of this technology to quartermicron VLSI lithography can be achieved by minimizing the degradation of resolution caused by the proximity effect from scattered electrons and beam edge resolution. One aproach to limiting the effect of these factors is using a patterning technique which transfers precisely a beam image to a resist.