DocumentCode :
472659
Title :
Reactive Ion Stream Etching and Metallic Compund Deposition Using ECR Plasma Technology
Author :
Ono, T. ; Takahashi, C. ; Oda, M. ; Matsuo, S.
Author_Institution :
Atsugi Electrical Communication Laboratory, NTT Atsugi-shi, Kanagawa 243-01, Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
84
Lastpage :
85
Keywords :
Magnetic fields; Magnetic films; Plasma applications; Plasma density; Plasma materials processing; Plasma properties; Plasma transport processes; Sputter etching; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480315
Link To Document :
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