Title :
High Density Fetmos Eeprom Cell Using ONO Inter-Polysilicon Dielectrics
Author :
Kuo, Clinton ; Fu, Kuan ; Kim, Peter ; Chonko, Mark ; Jorvig, Jeff ; Yeargain, John R. ; Barnes, John J.
Author_Institution :
MOS Memory Group, Motorola Inc. Austin, Texas 78721
Keywords :
Dielectric substrates; EPROM; Electrons; Equations; Lithography; MOSFETs; Merging; Nonvolatile memory; Threshold voltage; Tunneling;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
