DocumentCode :
472667
Title :
A High Density Single-Poly Si Structure Eeprom with LB (Lowered Barrier Height) Oxide for VLSI´s
Author :
Matsukawa, N. ; Morita, S. ; Shinada, K. ; Miyamoto, J. ; Tsujimoto, J. ; Iizuka, T. ; Nozawa, H.
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Kawasaki 210, Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
100
Lastpage :
101
Keywords :
Annealing; Circuits; Contact resistance; EPROM; Ion implantation; Laboratories; Microprocessor chips; Semiconductor devices; Thermionic emission; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480323
Link To Document :
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