Title :
Stress Bias Dependence of Hot Carrier Degradation of NOSFETs
Author :
Katto, H. ; Okuyama, K. ; Meguro, S. ; Suzuki, N.
Author_Institution :
Musashi Works, Hitachi Ltd. 1450 Josuihon-cho, Kodaira, Tokyo, 187 Japan
Keywords :
CMOS process; Degradation; Fabrication; Hot carriers; Implants; Oxidation; Passivation; Stress; Temperature distribution; Testing;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
