Title :
Effects of Device Processing on Hot-Electron Induced Device Degradation
Author :
Hsu, Fu-Chiell ; Chiu, Kuanig Yi
Author_Institution :
Hewlett-Packard Laboratories Palo Alto, CA 94304
Keywords :
Annealing; Degradation; Electrons; Etching; Hydrogen; MOSFET circuits; Passivation; Plasma applications; Plasma devices; Very large scale integration;
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
