DocumentCode
472672
Title
A Study of Gate Current and Reliability in Ultra-Thin Gate Oxide MOSFET´s
Author
Toriumi, A. ; Yoshimi, M. ; Taniguchi, K.
Author_Institution
VLSI Research Center, Toshiba Corporation Komukai, Saiwaiku, Kawasaki, 210 Japan
fYear
1985
fDate
14-16 May 1985
Firstpage
110
Lastpage
111
Keywords
Degradation; Electron traps; Fabrication; Hot carriers; Impact ionization; Kinetic energy; Predictive models; Stress; Substrate hot electron injection; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480328
Link To Document