DocumentCode :
472674
Title :
Metal-Coated Lightly-Doped Drain (MLD) MOSFET´s for Sub-Micron VLSI´s
Author :
Tsunashima, Y. ; Wada, T. ; Yamada, K. ; Moriya, T. ; Taniguchi, K. ; Kashiwagi, M. ; Tango, H. ; Nakamura, M. ; Dang, R.
Author_Institution :
VLSI Research Center, Toshiba Corporation 1, Toshiba-cho, Komukai, Saiwai-ku, Kawasaki, 210, Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
114
Lastpage :
115
Keywords :
Design optimization; Electrons; Impact ionization; MOSFET circuits; Plasma temperature; Silicidation; Silicides; Silicon; Surface resistance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472674
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