DocumentCode :
472676
Title :
Profiled Lightly Doped Drain (PLDD) Structure for High Reliable NMOSFETs
Author :
Toyoshima, Y. ; Nihira, N. ; Kanzaki, K.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 Japan
fYear :
1985
fDate :
14-16 May 1985
Firstpage :
118
Lastpage :
119
Keywords :
Analytical models; Degradation; Hot carriers; Impurities; MOSFETs; Semiconductor device reliability; Semiconductor devices; Stress; Surface resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location :
Kobe, Japan
Print_ISBN :
4-930813-09-3
Type :
conf
Filename :
4480332
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472676
بازگشت