DocumentCode
472676
Title
Profiled Lightly Doped Drain (PLDD) Structure for High Reliable NMOSFETs
Author
Toyoshima, Y. ; Nihira, N. ; Kanzaki, K.
Author_Institution
Semiconductor Device Engineering Laboratory Toshiba Corporation Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 Japan
fYear
1985
fDate
14-16 May 1985
Firstpage
118
Lastpage
119
Keywords
Analytical models; Degradation; Hot carriers; Impurities; MOSFETs; Semiconductor device reliability; Semiconductor devices; Stress; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1985. Digest of Technical Papers. Symposium on
Conference_Location
Kobe, Japan
Print_ISBN
4-930813-09-3
Type
conf
Filename
4480332
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