DocumentCode
472683
Title
Analysis of Submicron MOS Device Characteristics Using a Composite Full Three-Dimensional Process/Device Simulation System
Author
Onga, S. ; Shigyo, N. ; Yoshimi, M. ; Taniguchi, K.
Author_Institution
VLSI Research Center, Toshiba Corporation Kawasaki 210 Japan
fYear
1986
fDate
28-30 May 1986
Firstpage
15
Lastpage
16
Keywords
Analytical models; Circuit simulation; DC generators; Degradation; Doping; Impact ionization; Impurities; MOS devices; MOSFETs; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480347
Link To Document