Title :
High Speed CMOS Structure with Optimized Gate Work Function
Author :
Noguchi, T. ; Asahi, Y. ; Nakahara, M. ; Maeguchi, K. ; Kanzaki, K.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation Komukai, Saiwaiku, Kawasaki, 210 Japan
Keywords :
Boron; Counting circuits; Degradation; FETs; Hot carriers; Implants; MOS devices; MOSFETs; Stress; Substrates;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
