DocumentCode

472685

Title

High Speed CMOS Structure with Optimized Gate Work Function

Author

Noguchi, T. ; Asahi, Y. ; Nakahara, M. ; Maeguchi, K. ; Kanzaki, K.

Author_Institution

Semiconductor Device Engineering Laboratory Toshiba Corporation Komukai, Saiwaiku, Kawasaki, 210 Japan

fYear

1986

fDate

28-30 May 1986

Firstpage

19

Lastpage

20

Keywords

Boron; Counting circuits; Degradation; FETs; Hot carriers; Implants; MOS devices; MOSFETs; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1986. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Type

conf

Filename

4480349