DocumentCode

472689

Title

The Impact of Intrinsic Series Resistance on MOSFET Scaling

Author

Ng, K.K. ; Lynch, W.T.

Author_Institution

AT&T Bell Laboratories Murray Hill, New Jersey 07974

fYear

1986

fDate

28-30 May 1986

Firstpage

27

Lastpage

28

Keywords

Circuit noise; Conductivity; Contact resistance; Degradation; Doping profiles; MOSFET circuits; Shape; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1986. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Type

conf

Filename

4480353