Title :
The Impact of Intrinsic Series Resistance on MOSFET Scaling
Author :
Ng, K.K. ; Lynch, W.T.
Author_Institution :
AT&T Bell Laboratories Murray Hill, New Jersey 07974
Keywords :
Circuit noise; Conductivity; Contact resistance; Degradation; Doping profiles; MOSFET circuits; Shape; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
