DocumentCode :
472694
Title :
Rapid Thermal Annealing Process for Titanium-Silicide Contact Formation
Author :
Natsuaki, Nobuyoshi ; Chyu, Kiyonori ; Suzuki, Tadashi ; Kobayashi, Nobuyoshi ; Hashimoto, Naotaka ; Wada, Yasuo
Author_Institution :
Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan
fYear :
1986
fDate :
28-30 May 1986
Firstpage :
37
Lastpage :
38
Keywords :
Doping; Rapid thermal annealing; Rapid thermal processing; Rough surfaces; Silicidation; Silicides; Substrates; Surface morphology; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
Type :
conf
Filename :
4480358
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=472694
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