• DocumentCode
    472696
  • Title

    A Novel CMOS Process Utilizing After-Gate-Implantation Process

  • Author

    Mikoshiba, H. ; Yoshino, A. ; Hamano, K.

  • Author_Institution
    VLSI Development Division NEC Corporation Sagamihara, Kanagawa 229, Japan
  • fYear
    1986
  • fDate
    28-30 May 1986
  • Firstpage
    41
  • Lastpage
    42
  • Keywords
    CMOS process; CMOS technology; Capacitance; Electrodes; Fabrication; Implants; MOS devices; National electric code; Tail; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1986. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Type

    conf

  • Filename
    4480360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472696