Title :
A Novel CMOS Process Utilizing After-Gate-Implantation Process
Author :
Mikoshiba, H. ; Yoshino, A. ; Hamano, K.
Author_Institution :
VLSI Development Division NEC Corporation Sagamihara, Kanagawa 229, Japan
Keywords :
CMOS process; CMOS technology; Capacitance; Electrodes; Fabrication; Implants; MOS devices; National electric code; Tail; Very large scale integration;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
