DocumentCode
472699
Title
The Impact of Non-Ohmic Polysilicon Emitter Resistance on Bipolar Transistor Performance
Author
Stork, J.M.C. ; Cressler, J.D.
Author_Institution
IBM Research Center, P.O. Box 218, Yorktown Heights, NY 10598 (914) 945-2848
fYear
1986
fDate
28-30 May 1986
Firstpage
47
Lastpage
48
Abstract
The potential performance enhancement of polysilicon emitters in bipolar transistors may be reduced when the contact resistance is high and nonohmic. Our experimental data shows the expected correlation between DC series resistance and AC switching performance even for polysilicon emitters without intentional interface oxides.
Keywords
Bipolar transistors; Conductivity; Contact resistance; Current density; Current measurement; Degradation; Delay; Electrical resistance measurement; Performance gain; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480363
Link To Document