Title :
The Impact of Non-Ohmic Polysilicon Emitter Resistance on Bipolar Transistor Performance
Author :
Stork, J.M.C. ; Cressler, J.D.
Author_Institution :
IBM Research Center, P.O. Box 218, Yorktown Heights, NY 10598 (914) 945-2848
Abstract :
The potential performance enhancement of polysilicon emitters in bipolar transistors may be reduced when the contact resistance is high and nonohmic. Our experimental data shows the expected correlation between DC series resistance and AC switching performance even for polysilicon emitters without intentional interface oxides.
Keywords :
Bipolar transistors; Conductivity; Contact resistance; Current density; Current measurement; Degradation; Delay; Electrical resistance measurement; Performance gain; Temperature;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
