Comparison of TiSi2 and WSI2 Silicided Shallow Junctions for Sub-Micron CMOSs

Author

Kobayashi, Nobuyoshi ; Hashimoto, Naotaka ; Ohyu, Kiyonori ; Kaga, Toru ; Iwata, Seiichi

Author_Institution

Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo 185, Japan

fYear

1986

fDate

28-30 May 1986

Firstpage

Lastpage

Keywords

Annealing; CMOS technology; Chemicals; Conductivity; Impurities; Laboratories; MOSFETs; Optical films; Silicidation; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1986. Digest of Technical Papers. Symposium on

Conference_Location

San Diego, CA, USA

Type

Filename

4480364

Link To Document