DocumentCode
472703
Title
A Highly Reliable Pure Al Metallization with Low Contact Resistance Utilizing Oxygen-Stuffed TiN Barrier Layer
Author
Iwabuchi, S. ; Shima, S. ; Moriya, T. ; Maeda, T.
Author_Institution
VLSI Research Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
fYear
1986
fDate
28-30 May 1986
Firstpage
55
Lastpage
56
Keywords
Contact resistance; Grain boundaries; Heat treatment; Heating; Metallization; Semiconductor device reliability; Substrates; Surface treatment; Tin; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480367
Link To Document