• DocumentCode
    472704
  • Title

    Tungsten Photochemical Vapor Deposition for VLSI Application and its Reaction Mechanism

  • Author

    Itoh, Hitoshi ; Moriya, Takahiko ; Toyama, Masaharu

  • Author_Institution
    Toshiba Research and Development Center Komukai, Kawasaki, 210, Japan
  • fYear
    1986
  • fDate
    28-30 May 1986
  • Firstpage
    57
  • Lastpage
    58
  • Keywords
    Automatic control; Chemical vapor deposition; Inductors; Kinetic theory; Photochemistry; Pressure control; Steady-state; Temperature control; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1986. Digest of Technical Papers. Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Type

    conf

  • Filename
    4480368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=472704