Title :
A Hot Carrier Analysis Utilizing MINIMOS 3.0
Author :
Hänsch, W. ; Werner, C. ; Selberherr, S.
Author_Institution :
Siemens AG, Central Research and Development, Microelectronics Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
Keywords :
Charge carrier density; Current density; Doping; Electrons; Equations; Hot carriers; Impact ionization; Substrates; Temperature; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
