Title :
Asymmetry of the Substrate Current Characteristics Enhanced by the Gate Bird´s Beak
Author :
Hamamoto, T. ; Oowaki, Y. ; Hieda, K. ; Ohuchi, K.
Author_Institution :
VLSI Research Center Toshiba Corporation 1, Komukai, Toshibacho, Saiwaiku, Kawasaki 210, Japan
Keywords :
Analytical models; Degradation; Electric resistance; Impact ionization; Ion beams; MOSFET circuits; Probability distribution; Shadow mapping; Very large scale integration; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
