Title :
Reliability Aspects of 100A Inter-Poly Dielectrics for High Density VLSI´s
Author :
Mori, S. ; Sato, M. ; Yoshikawa, K. ; Nozawa, H. ; Yasuhisa, N. ; Yanase, T.
Author_Institution :
Semiconductor Device Engineering Laboratory Toshiba Corporation, Kawasaki, Japan
Keywords :
Capacitors; Dielectric devices; Dielectric thin films; Fabrication; Integrated circuit reliability; Leakage current; Oxidation; Semiconductor device reliability; Stress; Very large scale integration;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
