DocumentCode
472713
Title
A Double Word Line Structure in ECL RAM
Author
Nakase, Y. ; Anami, K. ; Shiomi, T. ; Kayano, S.
Author_Institution
LSI R & D Laboratoy, Mitsubishi Ekectic Corporation 4-1 Mizuhara, Itami, 664 Japan
fYear
1986
fDate
28-30 May 1986
Firstpage
75
Lastpage
76
Keywords
Capacitance; Circuits; Clamps; Electric variables; Error analysis; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location
San Diego, CA, USA
Type
conf
Filename
4480377
Link To Document