Title :
A Double Word Line Structure in ECL RAM
Author :
Nakase, Y. ; Anami, K. ; Shiomi, T. ; Kayano, S.
Author_Institution :
LSI R & D Laboratoy, Mitsubishi Ekectic Corporation 4-1 Mizuhara, Itami, 664 Japan
Keywords :
Capacitance; Circuits; Clamps; Electric variables; Error analysis; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation; Voltage;
Conference_Titel :
VLSI Technology, 1986. Digest of Technical Papers. Symposium on
Conference_Location :
San Diego, CA, USA
