DocumentCode
472726
Title
Variable Proximity Corrections for Submicron Optical Lithographic Masks
Author
Nissan-Cohen, Y. ; Frank, P. ; Balch, E.W. ; Thompson, B. ; Polasko, K. ; Brown, D.M.
Author_Institution
General Electric Corporate Research and Development Center P.O. Box 8 Schenectady, NY 12301
fYear
1987
fDate
22-23 May 1987
Firstpage
13
Lastpage
14
Abstract
The method for applying variable proximity corrections is easily adopted to a self-contained design and fabrication system. Results show that this methodology can extend the practical limit of existing DSW exposure systems into the submicron region.
Keywords
Circuit synthesis; Etching; Lithography; Optical device fabrication; Proximity effect; Research and development; Resists; Size control; System testing; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location
Karuizawa, Japan
Type
conf
Filename
4480398
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