Title :
Accelerated Testing of Silicon Dioxide Wearout
Author :
Chen, I.C. ; Lee, J. ; Hu, C.
Author_Institution :
Department of Electrical Engineering and Computer Sciences University of California, Berkeley Berkeley, CA 94720
Abstract :
Oxide lifetime extrapolation using log(tBD) or better log(QBD) against 1/Eox plot is more accurate and has a theoretical basis. Highly accelerated oxide test completed in seconds appears to be feasible. The acceleration factor is also a function of the severity of the oxide defect. Extrapolation of defect-related breakdown lifetime can be performed assuming an effective oxide thinning for defects.
Keywords :
Acceleration; Current density; Design for quality; Electric breakdown; Extrapolation; Life estimation; Performance evaluation; Silicon compounds; Testing; Tunneling;
Conference_Titel :
VLSI Technology, 1987. Digest of Technical Papers. Symposium on
Conference_Location :
Karuizawa, Japan
